Monte Carlo Simulation of Electron Energy Loss Spectra of Group III-Nitride Nanoscale Semiconductors

Group III-nitride semiconductors are a main research interest in the optoelectronics because of their unique physical and electronic properties [1]. The thin layers of these semiconductors at the nanoscale are now very common in the modern devices. Hence, proper materials characterizations with high spatial and compositional resolution such as electron energy loss spectroscopy (EELS) are essential for their research [2]. Monte Carlo (MC) simulation of EELS can provide useful information about the parameters of experimental EELS to obtain the best quantitative analysis. Optical data models have been proved as a proper physical model in MC simulations of EELS [3]. In the optical data models, the optical oscillator strength (OOS) is the main input for the calculations of inelastic scatterings [3].